Gaya APA
Turvey, Keith & Dignan, James J.. ().
Optimum rectangular geometry for Hall effect devices and their application in determining properties of electrons in silicon (No. 7. Vol. 60 Juli-1992).
:
american journal of physics.
Gaya Chicago
Turvey, Keith & Dignan, James J..
Optimum rectangular geometry for Hall effect devices and their application in determining properties of electrons in silicon.
No. 7. Vol. 60 Juli-1992
:
american journal of physics,
.
Index Artikel.
Gaya MLA
Turvey, Keith & Dignan, James J..
Optimum rectangular geometry for Hall effect devices and their application in determining properties of electrons in silicon.
No. 7. Vol. 60 Juli-1992
:
american journal of physics,
.
Index Artikel.
Gaya Turabian
Turvey, Keith & Dignan, James J..
Optimum rectangular geometry for Hall effect devices and their application in determining properties of electrons in silicon.
No. 7. Vol. 60 Juli-1992
:
american journal of physics,
.
Index Artikel.