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Sumber artikel:Jurnal. Halaman: 17-20 The GaN thin films were grown on (0001) sapphire substrates using hot - wire pulsed laser deposition methode. The substrate and hot - wire temperature were around 680 and 1000 derajat C respectively. The efffects of the nitrogen pressure during growth on the properties of GaN films have been investi-gated. XRD characterization shows taht GaN film with c- axis orientation of (0002) and (0004) occurs if nitrogen gas partial pressure was increased up to 0.25 mbar but the quality of GaN film decreased if gas partial pressure increased up to 0.35 mbar. Similar result was also found for the gas partial pressure of 0.15 mbar without using heater filament at nitrogen gas flow. SEM characterization shows that at the surface of the film there were GaN particulates of the size of 0.1-0.4 um. Number of particulate de-creased if partial gas pressure increased up to 0.35 mbar by using heater filament. 1. GaN 2. TEKANAN PARSIAL GAS NITROGEN 500 SAI UPT Perpustakaan UM Koleksi Bahan Pustaka Perpustakaan UM 2 -42872 2012-05-30 00:00:00 2012-05-30 00:00:00 machine generated